J. Schaub, D. Kuchta, et al.
OFC 2001
High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1-xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is obtained using conventional alloyed AuGeNi contacts.
J. Schaub, D. Kuchta, et al.
OFC 2001
C.L. Schow, F.E. Doany, et al.
OFC/NFOEC 2008
F.E. Doany, C.L. Schow, et al.
OFC/NFOEC 2008
D.N. De Araujo, M. Cases, et al.
ECTC 2006