K. Stawiasz, D. Kuchta, et al.
ECTC 1997
Paper
Improved contacts to semi-insulating GaAs photoconductive switches using a graded layer of InGaAs
Abstract
High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1-xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is obtained using conventional alloyed AuGeNi contacts.
Related
Conference paper
Terabus: A Waveguide-Based Parallel Optical Interconnect
F.E. Doany, J.A. Kash, et al.
FiO 2005
Conference paper
Packaging aspects of the Jitney parallel optical interconnect
M.S. Cohen, Glen W. Johnson, et al.
ECTC 1998
Conference paper
Communication technologies for exascale systems
J.A. Kash, P. Pepeljugoski, et al.
SPIE OPTO 2009