B. Pezeshki, D. Kuchta, et al.
CLEO 1996
High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1-xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is obtained using conventional alloyed AuGeNi contacts.
B. Pezeshki, D. Kuchta, et al.
CLEO 1996
Peter Xiao, D. Kuchta, et al.
ISSCC 1997
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
R.V. Pole, E.M. Conwell, et al.
Applied Optics