Joong-ho Choi, D.L. Rogers, et al.
OFC 1996
High performance photoconductive switches are demonstrated using a molecular beam epitaxy grown graded layer of InxGa1-xAs to make an ohmic contact to semi-insultating GaAs. It is found that the graded layer results in a peak signal amplitude that is more than a factor of 2 larger than what is obtained using conventional alloyed AuGeNi contacts.
Joong-ho Choi, D.L. Rogers, et al.
OFC 1996
C.L. Schow, F.E. Doany, et al.
OFC/NFOEC 2007
S.J. Koester, B.-U. Klepser, et al.
DRC 1998
K. Stawiasz, D. Kuchta, et al.
ECTC 1997