Demonstration of npn InAs bipolar transistors with inverted base doping
- Paul E. Dodd
- Michael L. Lovejoy
- et al.
- 1996
- IEEE Electron Device Letters
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7 results for D.G. Pettit
Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfaces
- S. Chang
- L.J. Brillson
- et al.
- 1990
- Physical Review Letters
InAs bipolar transistors: A path to high-performance cryogenic electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- Device Research Conference 1993
VIA-7 In As Bipolar Transistors: A Path to High-Performance Cryogenic Electronics
- P.E. Dodd
- M.R. Melloch
- et al.
- 1993
- IEEE Transactions on Electron Devices
Improved contacts to semi-insulating GaAs photoconductive switches using a graded layer of InGaAs
- D. Kuchta
- J.R. Whinnery
- et al.
- 1990
- Applied Physics Letters
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
- K.L. Kavanagh
- M.A. Capano
- et al.
- 1988
- Journal of Applied Physics
Efficient electroluminescence from GaAs diodes at 300°K
- H. Rupprecht
- J. Woodall
- et al.
- 1966
- Applied Physics Letters