Impurities in semimetals

M.Ya. Azbel

doi:10.1016/0038-1098(83)90590-2

Solid State Communications

Paper

01 Jan 1983

Impurities in semimetals

View publication

Abstract

Localization in semimetals and semiconductors strongly depends on the character of disorder. The resistance may decrease when the concentration of vacancies increases, and may be anomalously low for small size substitutions. © 1983.

Paper

Effect of electron correlation in a narrow band

K.A. Chao

Physical Review B

Paper

Thermally Developable, Positive Resist Systems with High Sensitivity

Hiroshi Ito, Reinhold Schwalm

JES

Paper

Interface kinetics and crystal growth under conditions of constant cooling rate. I. Constant diffusion coefficient

R. Ghez, J.S. Lew

Journal of Crystal Growth

Conference paper

High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay

M. Hargrove, S.W. Crowder, et al.

IEDM 1998

View all publications

Abstract

Related

Effect of electron correlation in a narrow band

Thermally Developable, Positive Resist Systems with High Sensitivity

Interface kinetics and crystal growth under conditions of constant cooling rate. I. Constant diffusion coefficient

High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay