In-Line Metrology for Sub-2nm Technology Nodes

In this presentation, an overview of metrology challenges for 2 nm technology nodes and beyond is presented. After a brief introduction of IBM Semiconductors, the transistor technology roadmap for the next 15 years is discussed along with major metrology opportunities for NanoSheet and NanoStack architectures. Several recent metrology innovations that have made the lab-to-fab transition are introduced and applications discussed. Among them are in-line techniques such as vertical traveling scatterometry, Raman spectroscopy, and secondary ion mass spectrometry (SIMS). Finally, the need for (soft) x-ray metrology is highlighted, which requires development of high-brightness sources. Additionally, with the introduction of 2D materials, the industry is looking for fast in-line capabilities to characterize such materials at the atomic scale.