In-Line Metrology Requirements and Needs for Leading-Edge Technology

Abstract

With continued scaling and especially the increasing complexity of state-of-the-art logic device architectures, in-line metrology has become more important but also significantly more challenging. Specifically, the transition from fin FET to gate-all-around nanosheet FET devices is very demanding on metrology due to new process modules with small volume fractions and buried surfaces. In general, tightly controlled processes for economical development and manufacturing requires fast, accurate, and non-destructive measurements and metrology. In this paper, in-line metrology techniques and requirements for leading edge logic technology will be reviewed. Challenges and needs for effective process monitoring and control to ensure continued successful manufacturing of high-performing next-generation semiconductor devices will be presented and discussed.