PaperHigh concentration Bi δ-doping layers on Si(001)J. Falta, O. Mielmann, et al.Applied Surface Science
PaperGrowth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)A. Portavoce, M. Kammler, et al.Physical Review B - CMMP
PaperEffect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructuresE.A. Stach, R. Hull, et al.Journal of Applied Physics
PaperIn-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si (001) heterostructuresE.A. Stachf, R. Hull, et al.Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
