Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Selective Chemical Vapor Deposition of Crystalline Ge-Sb-Te alloys initiating at the bottom metal contact of vias of various sizes has been accomplished. The method is based on selecting Sb and Te precursors which do not decompose on dielectric surfaces in the utilized temperature range. © 2010 Materials Research Society.
T.N. Morgan
Semiconductor Science and Technology
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
J. Tersoff
Applied Surface Science
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008