S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
The reaction of atomic hydrogen with adsorbed Br is compared on Si(100) and Si(111) surfaces from 50°C to 300°C. On both surfaces, Br removal rate is first order in atomic hydrogen flux, first-order in Br coverage, and exhibits a near zero activation energy. On Si(111), this rate also depends on surface hydrogen coverage, indicating that different mechanisms occur on these surfaces. © 1993 American Institute of Physics.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
C.M. Greenlief, S. Gates, et al.
Chemical Physics Letters
S. Gates
Journal of Physical Chemistry
S. Gates, S.K. Kulkarni
Applied Physics Letters