Keith A. Jenkins, Eduard Cartier, et al.
IEEE Electron Device Letters
Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed. They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations. Spiral inductors have inductance values in the range of ∼0.15-80 nH with typical maximum quality-factors (Q max) of 3-20. The Q max's are highest if the doping concentration under the inductors is kept minimum. It is shown that the inductor area is an important parameter toward optimization of Q max at a given frequency. The inductors can be represented in circuit design by a simple lumped-element model. MOS capacitors have Q's of ∼20/f (GHz)/C(pF), metal-insulator-metal (MIM) capacitors reach Q's of ∼80/f(GHz) /C(pF), and varactors with a 40% tuning range have Q's of ∼70/f(GHz)/C(pF). Those devices can be modeled by using lumped elements as well. The accuracy of the modeling is verified by comparing the simulated and the measured high-frequency characteristics of a fully integrated, passive-element bandpass filter.
Keith A. Jenkins, Eduard Cartier, et al.
IEEE Electron Device Letters
Tian Xia, Peilin Song, et al.
ETS 2004
Keith A. Jenkins
IEEE T-ED
James Warnock, John D. Cressler, et al.
IEEE Electron Device Letters