Interconnect Issues post 45nm

Abstract

Despite many projections on the inevitable post-PVD evolution of interconnect technology, it remains PVD-based for liner-seed through 45 nm and perhaps farther, with an ALD process change the obvious next step perhaps followed by a switch from Ta to Ru.. Cu size effects are not critical to low-level (1x) line RC and the biggest performance opportunity is with the high level fat lines. CA technology; both barrier and fill, does not scale well and may evolve to more interconnect-like materials, potentially unifying two tooling areas. © 2005 IEEE.