Interface trapping properties of nMOSFETs with Al₂O ₃/SiO_xN_y/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation

The interface properties of Al2O3/SiO xNy/Si(100) nMOSFETs are examined using sub-threshold current-voltage, variable base charge pumping, and low frequency (1/f) noise measurements. It is shown that exposure to ionizing irradiation leads to a reduction in effective interface trap density (Dit) for both positive and negative bias irradiations. This effect may result from radiation-induced neutralization of a large pre-irradiation density of border traps. © 2004 Elsevier B.V. All rights reserved.