PaperModification of the threshold current and near-field emission pattern of a GaAs laser by an adsorbed dielectric layerE.J. Walker, Alwin E. MichelJournal of Applied Physics
PaperAnomalous transient diffusion of ion implanted dopants: A phenomenological modelAlwin E. MichelNuclear Inst. and Methods in Physics Research, B
PaperSaturation of the optical absorption in GaAsAlwin E. Michel, Marshall I. NathanApplied Physics Letters
PaperRapid annealing and the anomalous diffusion of ion implanted boron into siliconAlwin E. Michel, W. Rausch, et al.Applied Physics Letters
