P. Alnot, D.J. Auerbach, et al.
Surface Science
In the stressed system of (100) silicon on sapphire, the primed ladder of subbands forms the electronic ground state of an n-channel accumulation layer. Far infrared resonances corresponding to intersubband transitions perpendicular to the surface have been observed using a Fourier transform spectrometer. The resonance is asymmetrical and composed of the 0′-1′ and probably higher order transitions. © 1983.
P. Alnot, D.J. Auerbach, et al.
Surface Science
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Mark W. Dowley
Solid State Communications
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science