E. Burstein
Ferroelectrics
In the stressed system of (100) silicon on sapphire, the primed ladder of subbands forms the electronic ground state of an n-channel accumulation layer. Far infrared resonances corresponding to intersubband transitions perpendicular to the surface have been observed using a Fourier transform spectrometer. The resonance is asymmetrical and composed of the 0′-1′ and probably higher order transitions. © 1983.
E. Burstein
Ferroelectrics
Kigook Song, Robert D. Miller, et al.
Macromolecules
Ming L. Yu
Physical Review B
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering