C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
In the stressed system of (100) silicon on sapphire, the primed ladder of subbands forms the electronic ground state of an n-channel accumulation layer. Far infrared resonances corresponding to intersubband transitions perpendicular to the surface have been observed using a Fourier transform spectrometer. The resonance is asymmetrical and composed of the 0′-1′ and probably higher order transitions. © 1983.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
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