B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
In the stressed system of (100) silicon on sapphire, the primed ladder of subbands forms the electronic ground state of an n-channel accumulation layer. Far infrared resonances corresponding to intersubband transitions perpendicular to the surface have been observed using a Fourier transform spectrometer. The resonance is asymmetrical and composed of the 0′-1′ and probably higher order transitions. © 1983.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
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ACS Macro Letters
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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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Big Data 2022