Ellen J. Yoffa, David Adler
Physical Review B
In the stressed system of (100) silicon on sapphire, the primed ladder of subbands forms the electronic ground state of an n-channel accumulation layer. Far infrared resonances corresponding to intersubband transitions perpendicular to the surface have been observed using a Fourier transform spectrometer. The resonance is asymmetrical and composed of the 0′-1′ and probably higher order transitions. © 1983.
Ellen J. Yoffa, David Adler
Physical Review B
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
T.N. Morgan
Semiconductor Science and Technology
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron