Characterization of plated Cu thin film microstructures
L. Gignac, K.P. Rodbell, et al.
MRS Spring Meeting 1999
Infrared (IR)-absorbance spectroscopy was investigated as a technique for monitoring titanium silicide formation during the reaction of Ti films on (100) Si substrates. Films annealed to various stages of reaction were monitored by x-ray diffraction, film resistivity, and optical reflectance in order to relate the changes in the IR-absorbance spectra to reaction progress. Films at different stages of reaction showed distinctly different extinction coefficients α, and absorbance versus wave-number curves. IR absorbance was determined to be a useful indicator of reaction progress, especially in those cases where samples at different stages of the silicidation reaction have the same resistance but different absorbance behaviors. © 1995 American Institute of Physics.
L. Gignac, K.P. Rodbell, et al.
MRS Spring Meeting 1999
E. Gusev, V. Narayanan, et al.
IEDM 2004
J.M.E. Harper, J. Gupta, et al.
Applied Physics Letters
J.M.E. Harper, C. Cabral Jr., et al.
MRS Spring Meeting 1999