Ion implantation in gallium arsenide mesfet technology

Abstract

This review emphasizes controlled shallow doping of GaAs by ion implantation and its limitations to the state-of-art GaAs IC technology. It discusses the electrical activation behavior of implanted silicon in GaAs upon subsequent capless or silicon nitride capped rapid thermal annealing (RTA). It is demonstrated that atomic IT diffuses into the implanted region of GaAs during PECVD of a Si3N4 cap and the II retards the electrical activation kinetics of the implanted Si. Applications of ion implantation to achieve buried-p layers as well as isolation between neighboring devices in GaAs are also briefly discussed.