Buried oxide channel field effect transistor
J. Misewich, A.G. Schrott
MRS Proceedings 2000
Strong, stable adhesion of Cu thin films deposited on Al2O3 (sapphire) can be obtained by presputtering the substrate surface with 500 eV Ar+ ions before deposition of copper. The existence of a well-defined optimum fluence of sputtering ions suggests that the interface atomic configuration can be optimized to favor the formation of Cu-Al-O chemical bonding. The existence of a ternary bonding environment is inferred independently from a new dominant peak in the XPS spectrum from interface copper, whose occurrence is correlated with the optimized adhesion conditions. © 1987 Elsevier Science Publishers B.V.
J. Misewich, A.G. Schrott
MRS Proceedings 2000
A.J. Kellock, J.E.E. Baglin, et al.
MRS Spring Meeting 1994
A. Grill, V.V. Patel, et al.
MRS Fall Meeting 1996
K.N. Tu, R.D. Thompson
Acta Metallurgica