M.H. Brodsky, R.S. Title, et al.
Physical Review B
Optical and Hall effect measurements on thin film layers of polycrystalline IrSi1.75 show that this material is a semiconductor. The band gap is approximately 1.2 eV. The films obtained saturated with silicon were p-type with a charge carrier density of the order of 4×1017 cm -3.
M.H. Brodsky, R.S. Title, et al.
Physical Review B
D.P. DiVincenzo, M.H. Brodsky
Journal of Non-Crystalline Solids
M.H. Brodsky, G. Lucovsky, et al.
Physical Review B
D.J. Wolford, B.A. Scott, et al.
Physica B+C