A. Grill, R.B. Laibowitz, et al.
Integrated Ferroelectrics
Josephson tunnel junctions have been fabricated incorporporating a thin layer of normal metal which is oxidized to form the tunnel barrier. The tunnel devices tested were of the form Nb/Al/Al2O3/Nb and several milliamperes of Josephson current were observed at 4.2°K. These samples have been found to have better defined tunneling characteristics than samples of the form Nb/NbOx/Nb. © 1972 The American Institute of Physics.
A. Grill, R.B. Laibowitz, et al.
Integrated Ferroelectrics
G.J. Clark, A.D. Marwick, et al.
Applied Physics Letters
R.B. Laibowitz, R.H. Koch, et al.
Physica B+C
P. Nédellec, J. Lesueur, et al.
Journal of The Less-Common Metals