A. Davidson, A. Palevski, et al.
Applied Physics Letters
Josephson tunnel junctions have been fabricated incorporporating a thin layer of normal metal which is oxidized to form the tunnel barrier. The tunnel devices tested were of the form Nb/Al/Al2O3/Nb and several milliamperes of Josephson current were observed at 4.2°K. These samples have been found to have better defined tunneling characteristics than samples of the form Nb/NbOx/Nb. © 1972 The American Institute of Physics.
A. Davidson, A. Palevski, et al.
Applied Physics Letters
S.I. Tan, K.Y. Ahn, et al.
IEEE Transactions on Magnetics
D. Grischkowsky, R. Sprik, et al.
CLEO 1987
R.B. Laibowitz
I-THERM 1990