Conference paper
(1 + ε)-approximate sparse recovery
Eric Price, David P. Woodruff
FOCS 2011
Thin films of BSTO show potential for use as a capacitor dielectric for future generations of dynamic random-access memory (DRAM). This report discusses progress made in the preparation of BSTO films by liquid-source metal-organic chemical vapor deposition (LS-MOCVD) and the issues related to integrating films of BSTO into a DRAM capacitor. Mechanisms influencing specific capacitance and charge loss of BSTO films are described, as are the requirements for the electrode and barrier materials used in stacked-capacitor structures.
Eric Price, David P. Woodruff
FOCS 2011
Fan Zhang, Junwei Cao, et al.
IEEE TETC
Leo Liberti, James Ostrowski
Journal of Global Optimization
B. Wagle
EJOR