Discourse segmentation in aid of document summarization
B.K. Boguraev, Mary S. Neff
HICSS 2000
Thin films of BSTO show potential for use as a capacitor dielectric for future generations of dynamic random-access memory (DRAM). This report discusses progress made in the preparation of BSTO films by liquid-source metal-organic chemical vapor deposition (LS-MOCVD) and the issues related to integrating films of BSTO into a DRAM capacitor. Mechanisms influencing specific capacitance and charge loss of BSTO films are described, as are the requirements for the electrode and barrier materials used in stacked-capacitor structures.
B.K. Boguraev, Mary S. Neff
HICSS 2000
Hans Becker, Frank Schmidt, et al.
Photomask and Next-Generation Lithography Mask Technology 2004
Apostol Natsev, Alexander Haubold, et al.
MMSP 2007
Zohar Feldman, Avishai Mandelbaum
WSC 2010