J.H. Stathis, R. Bolam, et al.
INFOS 2005
Transport of electrons in semiconductor nano-structures exhibits many features that are a consequence of quantum confinement and Coulomb blockade. A quantum dot coupled to a metal-oxide-semiconductor transistor's channel region is one example of such a structure with utility as a dense semiconductor memory. The memory state of this unit cell is a function of the number of electrons stored in the quantum dot and is sensed by the conduction in the channel. We describe a kinetic approach, based on a master equation, for modelling the injection and ejection of electrons into and from the quantum dot, and compare numerical results with experimental results for the silicon/silicon dioxide system where such memory structures have been achieved. © 1998 Academic Press Limited.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997