Straddle-gate transistor: Changing MOSFET channel length between off- and on-state towards achieving tunneling-defined limit of field-effect
- S. Tiwari
- J.J. Welser
- et al.
- 1998
- IEDM 1998
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70 results for Sandip Tiwari
Hole mobility improvement in silicon-on-insulator and bulk silicon transistors using local strain
- S. Tiwari
- M.V. Fischetti
- et al.
- 1997
- IEDM 1997
Scalable low power vertical memory
- H.I. Hanafi
- S. Tiwari
- et al.
- 1995
- IEDM 1995
Volatile and non-volatile memories in silicon with nano-crystal storage
- S. Tiwari
- F. Rana
- et al.
- 1995
- IEDM 1995
203 μa threshold current strained V-groove lasers
- S. Tiwari
- G.D. Pettit
- et al.
- 1992
- IEDM 1992
Lateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltages
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1991
- IEDM 1991
Overshoot in transient and steady-state in GaAs, InP, Ga.47In.53As, and InAs bipolar transistors
- S. Tiwari
- M.V. Fischetti
- et al.
- 1990
- IEDM 1990
GaAlAs/GaAs HETEROSTRUCTURE BIPOLAR TRANSISTORS: EXPERIMENT AND THEORY.
- S. Tiwari
- 1985
- IEDM 1985
Strained-Si channel super-self-aligned back-gate/double-gate planar transistors
- Hao Lin
- Haitao Liu
- et al.
- 2007
- IEEE Electron Device Letters
Room temperature operation of a quantum-dot flash memory
- J.J. Welser
- Sandip Tiwari
- et al.
- 1997
- IEEE Electron Device Letters