Conference paper
Silicon RF technology - The two generic approaches
Joachim N. Burghartz
ESSDERC 1997
A 10.5- to 11-GHz fully monolithic voltage controlled dilator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% with an on-chip varactor-tuned resonator and for a control voltage of O to 3 V. The circuit draws less than 8 niA from a 3-V supply including the reference branch bias current.
Joachim N. Burghartz
ESSDERC 1997
Daniel J. Friedman, Mounir Meghelli, et al.
IBM J. Res. Dev
Keith A. Jenkins, Joachim N. Burghartz
IEEE Transactions on Electron Devices
Joachim N. Burghartz, Siegfried R. Mader, et al.
IEEE T-ED