R.E. Walkup, Ph. Avouris, et al.
Nuclear Inst. and Methods in Physics Research, B
We report on in situ detection of diatomic products of plasma sputtering and reactive ion etching using the technique of laser-induced fluorescence. The diatomic molecules SiN, SiO, and SiF are observed in the gas phase when a silicon surface is subjected to ion bombardment in plasmas containing N 2, O2, and CF4, respectively. Information about the production mechanisms is obtained from the measured product concentrations under varying plasma conditions.
R.E. Walkup, Ph. Avouris, et al.
Nuclear Inst. and Methods in Physics Research, B
R.T. Hodgson, R.W. Dreyfus
Physics Letters A
R.E. Walkup, Ph. Avouris
JVSTA
H. Stahl, J. Appenzeller, et al.
Materials Science and Engineering C