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SPIE Advances in Semiconductors and Superconductors 1990
The epitaxial growth process for the preparation of thin (1-10 μm) epi-layers of magnetic garnet on a non-magnetic garnet substrate is described. Growth rates are related to growth and liquids temperatures, time, and rotation rate. The growth mechanism is interpreted in terms of diffusion boundary layer theory. Film composition is discussed in terms of growth parameters. © 1972.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting