A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
We describe the influence of local magnetization on electron localization in magnetic semiconductors. This includes a review of the magnetic field induced insulator-metal transition in Gd3-xvxS4 (where v=vacancy) and the observation of activated transport, i.e. a 'hard' gap, in the hopping regime for the diluted magnetic semiconductor Cd1-xMnxTe. © 1994.
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Frank Stem
C R C Critical Reviews in Solid State Sciences
Ellen J. Yoffa, David Adler
Physical Review B
J.K. Gimzewski, T.A. Jung, et al.
Surface Science