Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
We describe the influence of local magnetization on electron localization in magnetic semiconductors. This includes a review of the magnetic field induced insulator-metal transition in Gd3-xvxS4 (where v=vacancy) and the observation of activated transport, i.e. a 'hard' gap, in the hopping regime for the diluted magnetic semiconductor Cd1-xMnxTe. © 1994.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Imran Nasim, Melanie Weber
SCML 2024