J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
We describe the influence of local magnetization on electron localization in magnetic semiconductors. This includes a review of the magnetic field induced insulator-metal transition in Gd3-xvxS4 (where v=vacancy) and the observation of activated transport, i.e. a 'hard' gap, in the hopping regime for the diluted magnetic semiconductor Cd1-xMnxTe. © 1994.
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering