Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Poly(4-chloro and bromophthalaldehydes) sensitized with triphenylsulfonium hexafluoroantimonate develop to the substrate upon postbaking at >100°C for 1 min after exposure to less than 1 mJ/cm2 of 254 nm radiation or less than 1 μC/cm2 of 18 keV E-beam radiation, providing submicron resolution with vertical wall profiles and full thickness retention. The resists do not self-develop under these exposure conditions and do not exhibit any thermal flow when postbaked at 160°C. © 1989, The Electrochemical Society, Inc. All rights reserved.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Kigook Song, Robert D. Miller, et al.
Macromolecules