G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
X-ray-absorption fine-structure measurements were performed at the Mn K edge on In0.88Mn0.12As diluted magnetic semiconductors prepared by molecular-beam epitaxy. It has been found that in the high-growth-temperature samples (Ts=280°C), Mn atoms are primarily incorporated in the form of MnAs clusters with NiAs structure. No significant disorder is observed. In the low-growth-temperature samples (Ts=210°C), the majority of Mn atoms form small (r∼3 A), disordered, sixfold-coordinated centers with As. The presence of disorder in MnAs centers for the latter case is established using the method of cumulants. Only a very small fraction of Mn atoms may substitute for In in the zinc-blende InAs structure. Effective valency and coordination of Mn atoms deduced from the near-edge structure are the same for both the high- and low-growth-temperature In1-xMnxAs films. The formal valency is lower than +3. The local structures established in the present work are consistent with the observed difference in magnetic behavior for samples prepared at different substrate temperatures. © 1993 The American Physical Society.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Michiel Sprik
Journal of Physics Condensed Matter
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics