Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
Quantum interference corrections to the magnetoresistance in one-sided modulation doped Si/SiGe quantum wells were investigated. From the weak localization effect, the temperature dependence of the phase coherence time is deduced and compared with the momentum relaxation time. It is found that electron-electron scattering is consistent with this observed behavior, but electron-phonon scattering is not. For magnetic fields above 0.5 T, the magnetoresistance is attributed to disorder-induced electron-electron interaction.
Imran Nasim, Melanie Weber
SCML 2024
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Lawrence Suchow, Norman R. Stemple
JES
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials