J.A. Felix, M.R. Shaneyfelt, et al.
IEEE TNS
The total dose radiation response and low-frequency noise of metal-oxide-semiconductor transistors with Al 2O 3/SiO xN y/Si(100) gate stacks were analyzed. The transistors were characterized using subthreshold current-voltage and low-frequency noise measurements. The low-noise frequency and radiation-induced threshold-voltage shifts increased with dose and decreased with postirradiation annealing. The results show that the effective radiation-induced-hole trapping efficiency in Al 2O 3 gate dielectrics was higher than for SiO 2 gate dielectrics.
J.A. Felix, M.R. Shaneyfelt, et al.
IEEE TNS
J.A. Felix, J.R. Schwank, et al.
Microelectronics Reliability
Sokrates T. Pantelides, L. Tsetseris, et al.
ECS Meeting 2009
J.A. Felix, H.D. Xiong, et al.
INFOS 2003