Low resistivity tungsten for 32 nm node MOL contacts and beyond

Abstract

Contact resistance in high performance CMOS devices is a major challenge. The introduction of a novel modified low resistivity tungsten process coupled with a robust, and very conformal, thin atomic layer deposited TiN can reduce contact resistance and provide measurable device benefits with very good electrical yield performance. Key characteristics of the modified tungsten (W) process involve, in part, an aggressively thin nucleation layer and low temperature processing (CA, W, low resistivity, resistance). © 2011 Elsevier B.V. All rights reserved.