Low temperature Au-Au flip chip bonding with VUV/O ₃ treatment for 3D integration

This paper describes low temperature Au-Au bonding with vacuum ultraviolet (VUV) irradiation in the presence of oxygen gas. The VUV/O 3 treatment can remove organic contaminants without damages. The Au-Au bonding with VUV/O 3 treatment was achieved at 200 °C. The average shear strength was about 80 MPa per unit area. Therefore, it was proved that VUV/O 3 treatment is effective in Au-Au bonding. © 2012 IEEE.