P.J. Stiles, L.L. Chang, et al.
Applied Physics Letters
Observations of well developed negative resistance regions in both forward and reversed biased Si Zener diodes are explained in terms of a combination of impact ionization in the bulk material and Zener breakdown in the junction. © 1967.
P.J. Stiles, L.L. Chang, et al.
Applied Physics Letters
R. Tsu, W.E. Howard, et al.
Solid State Communications
L.L. Chang, L. Esaki, et al.
Applied Physics Letters
R. Tsu, J.F. Janak
Physical Review B