M. Berkenblit, T.B. Light, et al.
JES
Epitaxial Si has been grown selectively on oxide-patterned substrates from 850 down to 600°C for the first time in the Si-Cl-H system at atmospheric pressure. Si deposition was achieved by hydrogen reduction of dichlorosilane in an ultraclean system using a load lock. Epitaxy was achieved at low temperatures only when the hydrogen was purified to remove traces of H2O and O2 implying that an oxygen-free environment is the most important factor controlling epitaxy at low temperatures. Cross-sectional transmission electron micrographs reveal perfect crystallinity in the epitaxial layer and a totally clean and featureless interface between epitaxy and substrate.
M. Berkenblit, T.B. Light, et al.
JES
T.S. Kuan, Subramanian S. Iyer
SPIE Advances in Semiconductors and Superconductors 1990
J. Freeouf, G.W. Rubloff, et al.
Physical Review Letters
T.O. Sedgwick, Alwin E. Michel, et al.
Journal of Applied Physics