Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD
- T.O. Sedgwick
- V.P. Kesan
- et al.
- 1991
- IEDM 1991
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71 results for T.O. Sedgwick
High-Performance Emitter-Up/Down SiGe HBT's
- Joachim N. Burghartz
- Keith A. Jenkins
- et al.
- 1994
- IEEE Electron Device Letters
APCVD-grown self-aligned SiGe-base HBTs
- J.N. Burghartz
- T.O. Sedgwick
- et al.
- 1993
- BCTM 1993
Optical properties of planar and selectively grown SiGe/Si multiple quantum wells
- Detlev A. Grützmacher
- Thomas O. Sedgwick
- et al.
- 1993
- SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications 1993
An ultra-low thermal-budget SiGe-base bipolar technology
- J.N. Burghartz
- D.A. Grützmacher
- et al.
- 1993
- VLSI Technology 1993
Atmospheric pressure chemical vapor deposition of Si and SiGe at low temperatures
- T.O. Sedgwick
- P. Agnello
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Low temperature selective epitaxial growth of silicon at atmospheric pressure in an ultra-clean system
- T.O. Sedgwick
- P. Agnello
- et al.
- 1990
- Silicon Materials Science and Technology 1990
DIFFUSION OF ION-IMPLANTED BORON AND PHOSPHORUS DURING RAPID THERMAL ANNEALING OF SILICON.
- G.S. Oehrlein
- R. Ghez
- et al.
- 1984
- ICDS 1984
ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- ECS Meeting 1983
NEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.
- S. Cohen
- T.O. Sedgwick
- et al.
- 1983
- MRS Proceedings 1983