Hang-Yip Liu, Steffen Schulze, et al.
Proceedings of SPIE - The International Society for Optical Engineering
This paper is an overview of work at the IBM Thomas J. Watson Research Center on the chemical and physical considerations underlying the development of a low-temperature chemical vapor deposition process, designated ultrahigh-vacuum/chemical vapor deposition (UHV/CVD). The origins of the rigorous vacuum and chemical purity requirements of the process are discussed. Operating in the range of 500°C, the process has made it possible to explore the use, in silicon-based devices and atomic-length-scale structures, of a number of metastable materials in the Si:Ge system. Also discussed is associated experimental work on the fabrication of high-speed heterojunction bipolar transistors and high-mobility two-dimensional hole-gas structures.
Hang-Yip Liu, Steffen Schulze, et al.
Proceedings of SPIE - The International Society for Optical Engineering
Yigal Hoffner, Simon Field, et al.
EDOC 2004
M. Arafa, P. Fay, et al.
Electronics Letters
Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007