A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
In order to understand the degree to which a thermal component exists in the ablation of poly(methyl methacrylate) (PMMA), we investigated the temperature dependence of APD. The study of the ablation characteristics of PMMA at 193 nm reveals no temperature dependence. Etching characteristics at 248 nm, however, show a strong temperature dependence and we conclude that a thermal component plays a key role in the etching mechanism.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering