C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
The phenomenon of metastable phase formation during a constant temperature and constant pressure thin film reaction is explained by a kinetic model emphasizing the rate of transition. It is assumed that the reaction obeys a maximum time-dependent rather than time-independent negative free energy change. The product persists in the metastable state due to a high activation barrier to later transition. © 1991.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
T.N. Morgan
Semiconductor Science and Technology
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
E. Burstein
Ferroelectrics