Low-Threshold Strained GaInP Quantum-Well Ridge Lasers with AlGaAs Cladding Layers

Abstract

Visible lasers with two strained GaInP quantum wells and AlGaAs cladding layers have been fabricated using metal-organic vapor phase epitaxy. As a device structure, a dry-etched surface ridge has been chosen, which results in a small astigmatism and a low threshold current. Owing to an electroplated heat spreader on top of the ridge, the devices can be operated continuous-wave junction-side-up at temperatures up to 100°C. Lasers mounted junction-side-down with coated mirror facets operating at 30 mW output power show singlemode behavior and good reliability, as proven by a lifetime test of over 3000 h. © 1993 IEEE