High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment
- Richard A. Kiehl
- P.E. Hallali
- et al.
- 1991
- IEEE Electron Device Letters
Publications
Date
Featured collections
Popular topics
47 results for R.M. Potemski
Threshold for optically induced dislocation glide in GaAs-AlGaAs double heterostructures: Degradation via a new cooperative phenomenon?
- B. Monemar
- R.M. Potemski
- et al.
- 1978
- Physical Review Letters
Vertical cavity waveguide spectrometer for WDM communication
- B. Pezeshki
- F. Tong
- et al.
- 1993
- LEOS 1993
Compound semiconductor surface and interface problems in liquid phase epitaxy (lpe)
- M.B. Small
- R.M. Potemski
- 1989
- Proceedings of SPIE 1989
The Dissolution Kinetics of GaAs in Undersaturated Isothermal Solutions in the Ga-Al-As System
- M.B. Small
- R. Ghez
- et al.
- 2019
- JES
Epitaxial Growth and Selectivity of AlxGa1-xAs Using Novel Metalorganic Precursors
- M.S. Goorsky
- T.F. Kuech
- et al.
- 2019
- JES
Epitaxial Growth of GaAs with (C2H5)2GaCl and AsH3 in a Hotwall Reactor
- T.F. Kuech
- M.A. Tischler
- et al.
- 2019
- JES
Etch pits and dislocations in {100} GaAs wafers
- J. Angilello
- R.M. Potemski
- et al.
- 2008
- Journal of Applied Physics
Meniscus lines as nucleation sites for the active layer of a double-heterostructure laser grown by LPE
- M.B. Small
- J.M. Blum
- et al.
- 2008
- Applied Physics Letters
The formation of Ga1-xAlxAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutions
- M.B. Small
- R. Ghez
- et al.
- 2008
- Applied Physics Letters