V. Korenivski, D.C. Worledge
Applied Physics Letters
Paper
Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling
Abstract
Magnetoresistance (MR) measurement of unpatterned magnetic tunnel junction wafers was discussed. Current-in-plane tunneling was used. It was found that results are particularly useful for optimizing deposition conditions, nondestructive monitoring and also measures thermal stability.
Related
Conference paper
Recent advances in MRAM technology
W.J. Gallagher, D.W. Abraham, et al.
VLSI Technology 2005
Conference paper
Recent developments in ST-MRAM, including scaling
Eugene J. O'Sullivan, Martin J. Gajek, et al.
ECS Transactions
Y. Lu, P.L. Trouilloud, et al.
Journal of Applied Physics