A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
We combine a material self-assembly with conventional lithographic processes in order to fabricate magnetoelectronic devices composed of ordered three-dimensional arrays of magnetite (Fe3 O4) nanoparticles. The device magnetoresistance reaches 35% at 60 K, corresponding to an electron spin polarization of 73%. Magnetoresistance of 12% remains at room temperature. Magnetoresistance decreases with both increasing temperature and bias voltage, however, the magnetoresistance of nanoparticle-based structures is only weakly dependent on the voltage-a favorable attribute for application to electronics. © 2006 The American Physical Society.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Mark W. Dowley
Solid State Communications
E. Burstein
Ferroelectrics