Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
We combine a material self-assembly with conventional lithographic processes in order to fabricate magnetoelectronic devices composed of ordered three-dimensional arrays of magnetite (Fe3 O4) nanoparticles. The device magnetoresistance reaches 35% at 60 K, corresponding to an electron spin polarization of 73%. Magnetoresistance of 12% remains at room temperature. Magnetoresistance decreases with both increasing temperature and bias voltage, however, the magnetoresistance of nanoparticle-based structures is only weakly dependent on the voltage-a favorable attribute for application to electronics. © 2006 The American Physical Society.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Hiroshi Ito, Reinhold Schwalm
JES
R. Ghez, J.S. Lew
Journal of Crystal Growth