CHARGE TRAPPING IN GaAs/AlGaAs MODULATION DOPED FETs.
P.M. Mooney, P. Solomon, et al.
Gallium Arsenide and Related Compounds 1984
The strain fields produced in Si substrates due to pseudomorphically strained SiGe on Si(001) and evaporated Ni dots on Si(111) were mapped using x-ray microdiffraction. The extent of the strain fields were detected up to 120 times the film thickness away from the feature edge but varied as a function of the feature width, w. By normalizing the distances of the enhanced diffracted Si(004) intensity profiles by the observed MID values, a characteristic curve was obtained indicating that the enhanced intensity follows a w1/2 dependence for feature widths ranging from 1.5 to 20 μm.
P.M. Mooney, P. Solomon, et al.
Gallium Arsenide and Related Compounds 1984
S. Tiwari, M.V. Fischetti, et al.
IEDM 1997
C.E. Murray, I.C. Noyan, et al.
MRS Proceedings 2003
J.C. Tsang, P.M. Mooney, et al.
Journal of Applied Physics