A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Molecular beam sampling mass spectrometry combined with low-energy electron impact ionization has been used to detect and quantitate the stable molecules, ions, and silicon radicals created in the interaction of silane with a helium afterglow produced by a microwave discharge in pure helium. The observations are used to understand the afterglow chemistry and to elucidate some important features of the film growth mechanism in the remote plasma-enhanced chemical vapor deposition of silicon films. © 1995, American Vacuum Society. All rights reserved.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Ming L. Yu
Physical Review B
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000