A. Gangulee, F.M. D'Heurle
Thin Solid Films
Molecular beam sampling mass spectrometry combined with low-energy electron impact ionization has been used to detect and quantitate the stable molecules, ions, and silicon radicals created in the interaction of silane with a helium afterglow produced by a microwave discharge in pure helium. The observations are used to understand the afterglow chemistry and to elucidate some important features of the film growth mechanism in the remote plasma-enhanced chemical vapor deposition of silicon films. © 1995, American Vacuum Society. All rights reserved.
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Robert W. Keyes
Physical Review B