Measurement and analysis of source/drain contact resistance in FinFETs

Abstract

FinFET is a key device architecture for the 22-nm CMOS and beyond technology nodes. If special care is not taken, these devices could suffer from high series resistance due to the narrow width of their source/drain regions. Using the electrical characterization of fabricated devices, we extract and analyze the dominant component of this series resistance, namely the source/drain contact resistance. © 2012 SPIE.