J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
A technique for measuring stress (positive and negative) with a lateral spatial extent of approximately 2 μm is introduced. The technique, implemented using a Raman microprobe, is demonstrated with measurements of the frequency shift of the sharp, R‐luminescence lines (2Ā and Ē to 4A2 radiative transitions) in, and around, a hardness indentation in a 0.06‐wt%‐chromium doped sapphire. From the observed frequency shifts the stresses in regions sampled in the hardness impression, in the complex stress field surrounding it, and at the tip of a crack are measured. Copyright © 1990, Wiley Blackwell. All rights reserved
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Robert W. Keyes
Physical Review B