C. Cabral Jr., L. Clevenger, et al.
Applied Physics Letters
The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Rh, RhSi, Rh4S 5, and Rh3Si4 have been determined by means of photoresponse, capacitance, and forward current-voltage measurements. The results are compared to the results previously obtained with iridium, and with other plantinum related elements.
C. Cabral Jr., L. Clevenger, et al.
Applied Physics Letters
L. Stolt, F.M. D'Heurle, et al.
Thin Solid Films
J.E.E. Baglin, F.M. D'Heurle, et al.
Applied Physics Letters
F.M. D'Heurle
J. Phys. IV