Suresh Gundapaneni, Aranya Goswami, et al.
Applied Physics Express
The metal-gate granularity-induced threshold voltage (VT) variability and (VT) mismatch in Si gate-all-around (GAA) nanowire n-MOSFETs (n-NWFETs) are studied using coupled 3-D statistical device simulations considering quantum corrected room temperature drift-diffusion transport. The impact of metal-gate crystal grain size on linear and saturation mode VT variability are analyzed. The VT mismatch study predicts lower mismatch figure of merit (AVT) in TiN-gated Si GAA n-NWFETs compared with the reported experimental mismatch data for TiN-gated Si FinFETs.
Suresh Gundapaneni, Aranya Goswami, et al.
Applied Physics Express
Phil Oldiges, R. Muralidhar, et al.
SISPAD 2011
Aniruddha Konar, Mohit Bajaj, et al.
Journal of Applied Physics
Kaushik Nayak, Mohit Bajaj, et al.
IEEE T-ED