K.N. Tu
Materials Science and Engineering: A
The growth of high-quality epitaxial CaSi2 films on Si(111) is described along with a determination of the silicide atomic structure and the structure of the CaSi2/Si interface. These films constitute the first example of an epitaxial non-transition-metal silicide. The lack of d electrons and the large difference in electronegativity between Ca and Si promise to endow epitaxial calcium silicide and the silicide-silicon interface with intriguingly different electronic properties from the thoroughly studied transition-metal silicides. © 1988 The American Physical Society.
K.N. Tu
Materials Science and Engineering: A
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
J.H. Stathis, R. Bolam, et al.
INFOS 2005
H.D. Dulman, R.H. Pantell, et al.
Physical Review B