B. Monemar, J.M. Blum
Journal of Applied Physics
We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine interactions the defect is identified as a di-hydrogen vacancy complex, where the H atoms passivate two of the four dangling bonds in a monovacancy. A spin-triplet is the lowest electronic excited state of the defect, which exhibits a strong recombination channel for the free-carriers. © 1990 The American Physical Society.
B. Monemar, J.M. Blum
Journal of Applied Physics
A. Henry, O.O. Awadelkarim, et al.
Journal of Applied Physics
H. Weman, B. Monemar, et al.
Physical Review B
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