A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The effect of N content on the structure and properties of rf relatively sputtered α-SiNx was investigated. The N content in the α-SiNx film increases with the N2 flow rate until the stoichiometric composition (Si3N4) is reached. The refractive index asymptotically reaches 1.99 as the N/Si ratio approaches 1.33. The maximum density of 3.2 g/cm3 and hardness of 25 GPa are attained at the stoichiometric composition.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
A. Krol, C.J. Sher, et al.
Surface Science
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology